发明名称 POSITIVE RESIST COMPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a positive resist composition excellent in sensitivity and resolving power, ensuring excellent resolving power and pattern profile even if time passes considerably until after-heating after exposure and having small density dependency in microphotofabrication using far ultraviolet light, particularly ArF excimer laser light. SOLUTION: The positive resist composition contains two or more photo-acid generating agents each with a specified structure and a polymer having repeating structural units with different specified structures and also having a group which is decomposed by the action of an acid.
申请公布号 JP2001290276(A) 申请公布日期 2001.10.19
申请号 JP20000383801 申请日期 2000.12.18
申请人 FUJI PHOTO FILM CO LTD 发明人 KODAMA KUNIHIKO;SATO KENICHIRO;AOSO TOSHIAKI
分类号 G03F7/039;C07C309/06;C07C381/12;C08F220/18;C08F220/30;C08F222/00;C08F232/04;C08K5/02;C08K5/16;C08K5/36;C08L33/00;C08L35/00;C08L45/00;C08L83/04;C08L101/00;G03F7/004;H01L21/027 主分类号 G03F7/039
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