发明名称 |
POSITIVE RESIST COMPOSITION |
摘要 |
PROBLEM TO BE SOLVED: To provide a positive resist composition excellent in sensitivity and resolving power, ensuring excellent resolving power and pattern profile even if time passes considerably until after-heating after exposure and having small density dependency in microphotofabrication using far ultraviolet light, particularly ArF excimer laser light. SOLUTION: The positive resist composition contains two or more photo-acid generating agents each with a specified structure and a polymer having repeating structural units with different specified structures and also having a group which is decomposed by the action of an acid. |
申请公布号 |
JP2001290276(A) |
申请公布日期 |
2001.10.19 |
申请号 |
JP20000383801 |
申请日期 |
2000.12.18 |
申请人 |
FUJI PHOTO FILM CO LTD |
发明人 |
KODAMA KUNIHIKO;SATO KENICHIRO;AOSO TOSHIAKI |
分类号 |
G03F7/039;C07C309/06;C07C381/12;C08F220/18;C08F220/30;C08F222/00;C08F232/04;C08K5/02;C08K5/16;C08K5/36;C08L33/00;C08L35/00;C08L45/00;C08L83/04;C08L101/00;G03F7/004;H01L21/027 |
主分类号 |
G03F7/039 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|