| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a fine semiconductor device which has a high current drive force by suppressing the off-leak current, to reduce an offset voltage, as much as possible. SOLUTION: This method includes a step for forming a pair of element isolation insulating films on a semiconductor substrate with a distance between them for demarcating an element region; a step for forming a gate electrode, having a gate length of 30 nm or smaller on a channel region in the element region of the semiconductor substrate with a gate insulating film in between; a step for forming an offset spacer on a side surface of the gate electrode; a step for introducing impurities to the semiconductor substrate, excluding directly under the gate electrode, with the offset spacer and the gate electrode as masks, and then activating the impurities by heat-treating for a very short time of 100 msec or shorter at 1,000°C or higher by using flash lamp annealing, to form an impurity diffused region with a distance of 10 nm or smaller from an end part of the gate electrode; and a step for forming an inter-layer insulating film over the entire surface of the semiconductor substrate, and opening a contact hole, and then filling it with a conductive material to form a wiring. COPYRIGHT: (C)2008,JPO&INPIT
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