| 摘要 |
PROBLEM TO BE SOLVED: To improve optical characteristics and to efficiently array pixels by contriving the arrangement of a charge voltage conversion part and a transistor group. SOLUTION: The solid-state imaging apparatus comprises a plurality of pixels 11 including photoelectric conversion parts 12 for converting an incident light quantity to electric signals and forming an oblique grid array inclined to a scanning direction, and a charge voltage conversion part 13 for converting a signal charge read from the photoelectric conversion part 12 arranged between the two pixels 11A and 11B adjacent to each other in the diagonal direction of the pixels among the plurality of pixels 11 to a voltage. The charge voltage conversion part 13 is shared by the two pixels 11A and 11B, and a set of the transistor group 21 is arranged in a shared block 16 constituted of a pixel pair 14 comprising the two pixels 11A and 11B adjacent each other in the diagonal direction and a pixel pair 14 adjacent to the pixel pair and having wiring 15 connecting the charge voltage conversion parts 13 of the respective pixel pairs 14. COPYRIGHT: (C)2008,JPO&INPIT
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