发明名称 ELECTRODE STRUCTURE OF SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To solve the problem that an element itself is damaged by a pressing force when a wire is connected with an electrode pad on a semiconductor element. SOLUTION: An electrode pad 2 is formed on a semiconductor element 1 and a layer of protective film 3 is formed on the surface of the element by opening the electrode pad 2. The protective film 3 overlaps the outer circumferential part of the electrode pad 2, and the surface of the electrode pad 2 is opened under a state where an extended part 3a is formed. When a wire is bonded by means of a bonding capillary, forward end of the bonding capillary abuts against the extended part 3a of the overlapping protective film 3. Since it does not touch the electrode pad 2 directly, the electrode pad 2 of the semiconductor element 1 is prevented from being damaged with the pressure of bonding load even under severe bonding conditions.
申请公布号 JP2001298041(A) 申请公布日期 2001.10.26
申请号 JP20000113767 申请日期 2000.04.14
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 UEDA KENJI
分类号 H01L23/52;H01L21/3205;H01L21/60 主分类号 H01L23/52
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