| 摘要 |
The present invention provides a method of preparing a silica layer on a surface, the method comprising contacting the surface with a first alkoxysilane and a first base, such that a first siloxane layer is formed on the surface; and contacting the first siloxane layer with a combination of a binding alkoxysilane, a growth limiting alkoxysilane and a second base, such that a second siloxane layer forms on top of the first siloxane layer, wherein the silica layer is prepared at a temperature of less than 100° C., and wherein the growth limiting alkoxysilane limits the thickness of the silica layer to less than 100 nm, thereby preparing the silica layer.
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