发明名称 |
Semiconductor devices and methods for manufacturing the same |
摘要 |
Certain embodiments of the present invention relate to a semiconductor device that has a pad section having an excellent coherency with an interlayer dielectric layer, and a method for manufacturing the same. A semiconductor device 1000 has a pad layer 30A formed over an interlayer dielectric layer 20. The interlayer dielectric layer 20 includes at least a first silicon oxide layer 20b that is formed by a polycondensation reaction of a silicon compound and hydrogen peroxide, and a second silicon oxide layer 20c formed over the first silicon oxide layer and containing an impurity. The pad section 30A includes a wetting layer 32, an alloy layer 34 and a metal wiring layer 37.
|
申请公布号 |
US2001033028(A1) |
申请公布日期 |
2001.10.25 |
申请号 |
US20010818743 |
申请日期 |
2001.03.27 |
申请人 |
MATSUMOTO KAZUMI;MOROZUMI YUKIO;ASAHINA MICHIO |
发明人 |
MATSUMOTO KAZUMI;MOROZUMI YUKIO;ASAHINA MICHIO |
分类号 |
H01L23/52;H01L21/316;H01L21/3205;H01L21/60;H01L21/768;H01L23/485;(IPC1-7):H01L21/44;H01L21/31;H01L21/469;H01L23/48;H01L29/40 |
主分类号 |
H01L23/52 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|