Semiconductor memory device and production method thereof

摘要

A semiconductor memory device includes a silicon substrate having an impurity diffusion region, and a memory cell array. The memory cell array includes conductive layers laminated on the silicon substrate via interlayer insulation layers, a semiconductor layer extending in a direction of the lamination of the conductive layers, a charge storage film disposed between the conductive layers and the semiconductor layer, and an electrode disposed on the conductive layers. A groove having a direction of the lamination as a depth direction and a first direction different from the lamination direction as a lengthwise direction is formed through the conductive layers. The silicon substrate includes a silicide film disposed in the impurity diffusion region along the groove. The memory cell array includes a conductor, which is in contact with the electrode and the silicide film, in the groove. In the first direction, the conductor is shorter in length than the groove.

主权项

1. A semiconductor memory device comprising:
a silicon substrate having an impurity diffusion region; and a memory cell array including a plurality of conductive layers laminated on the silicon substrate via interlayer insulation layers, a semiconductor layer extending in a direction of the lamination of the plurality of conductive layers, a charge storage film disposed between the plurality of conductive layers and the semiconductor layer, and an electrode disposed on the plurality of conductive layers, a groove having a direction of the lamination as a depth direction and a first direction different from the lamination direction as a lengthwise direction being formed through the plurality of conductive layers, the silicon substrate including a silicide film disposed in the impurity diffusion region along the groove, and the memory cell array including a conductor, which is in contact with the electrode and the silicide film, in the groove, the conductor having a length in the first direction shorter than a length of the groove in the first direction.