Semiconductor structure having source/drain gouging immunity

摘要

There is set forth herein a method of fabricating a semiconductor structure, the method including forming a conductive metal layer over a source/drain region. The conductive metal layer in one aspect can prevent gouging of a source/drain region during removal of materials above a source/drain region. The conductive metal layer in one aspect can be used to pattern an air spacer for reduced parasitic capacitance. The conductive metal layer in one aspect can reduce a contact resistance between a source/drain region and a contact above a source/drain region.

主权项

1. A method comprising:
forming a conductive metal layer over a source/drain region; forming a dielectric layer over the conductive metal layer; removing material to define a contact hole, wherein the removing includes removing material of the dielectric layer; using the conductive metal layer to pattern air spacers; and filling the contact hole with a contact metal formation.