发明名称 CIRCUIT DESIGN SYSTEM AND SEMICONDUCTOR CIRCUIT DESIGNED BY USING THE SYSTEM
摘要 Provided are a circuit design system, which uses a transistor including a high-dielectric film and can reduce an area of a product while maintaining reliability of the product, and also provided is a semiconductor circuit designed by using the circuit design system. The circuit design system comprises: a processor; a storage unit in which a plurality of transistor designs have been stored; and a design module which designs a circuit by using the processor and the plurality of transistor designs according to defined requirements, wherein the plurality of transistor designs are designs for transistors each including a gate insulation film including a high-dielectric film. And the design module selects a first transistor design for a transistor, operating in a region in which a drain voltage is higher than a gate voltage, by analyzing circuit designs including the plurality of transistor designs, and substitutes the selected first transistor design with a second transistor design having a smaller size than the first transistor design, in which case a second drain-gate voltage (V_(DG)) of the second transistor design operating in an accumulation mode is higher than a first drain-gate voltage (V_(DG)) of the first transistor design operating in the accumulation mode.
申请公布号 KR20160095748(A) 申请公布日期 2016.08.12
申请号 KR20150017098 申请日期 2015.02.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, KYONG TAEK;PAE SANG WOO;KIM, HYE JIN;PARK, JUNE KYUN;LEE, HYUN WOO
分类号 G06F17/50 主分类号 G06F17/50
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