发明名称 |
CIRCUIT DESIGN SYSTEM AND SEMICONDUCTOR CIRCUIT DESIGNED BY USING THE SYSTEM |
摘要 |
Provided are a circuit design system, which uses a transistor including a high-dielectric film and can reduce an area of a product while maintaining reliability of the product, and also provided is a semiconductor circuit designed by using the circuit design system. The circuit design system comprises: a processor; a storage unit in which a plurality of transistor designs have been stored; and a design module which designs a circuit by using the processor and the plurality of transistor designs according to defined requirements, wherein the plurality of transistor designs are designs for transistors each including a gate insulation film including a high-dielectric film. And the design module selects a first transistor design for a transistor, operating in a region in which a drain voltage is higher than a gate voltage, by analyzing circuit designs including the plurality of transistor designs, and substitutes the selected first transistor design with a second transistor design having a smaller size than the first transistor design, in which case a second drain-gate voltage (V_(DG)) of the second transistor design operating in an accumulation mode is higher than a first drain-gate voltage (V_(DG)) of the first transistor design operating in the accumulation mode. |
申请公布号 |
KR20160095748(A) |
申请公布日期 |
2016.08.12 |
申请号 |
KR20150017098 |
申请日期 |
2015.02.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, KYONG TAEK;PAE SANG WOO;KIM, HYE JIN;PARK, JUNE KYUN;LEE, HYUN WOO |
分类号 |
G06F17/50 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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