发明名称 |
Zero-crossing detection circuit |
摘要 |
In one embodiment, a zero-crossing detection circuit can include: (i) a first detection circuit configured to detect a current through a main transistor of a main circuit of a switching power supply, and to generate a voltage sense signal that represents the current through the main transistor; (ii) a second detection circuit configured to detect if quasi-resonance occurs in the main circuit, the second detection circuit being configured to generate at least one pulse signal when the quasi-resonance is detected; and (iii) a control circuit configured to receive the at least one pulse signal and the voltage sense signal, to turn the main transistor off when the current through the main transistor reaches a predetermined value, and to turn the main transistor on when the at least one pulse signal is active. |
申请公布号 |
US9444321(B2) |
申请公布日期 |
2016.09.13 |
申请号 |
US201514604561 |
申请日期 |
2015.01.23 |
申请人 |
Silergy Semiconductor Technology (Hangzhou) LTD |
发明人 |
Xu Xiaoru;Liu Guojia;Deng Jian |
分类号 |
H02M1/08;H02M1/42;G01R19/175;H02M1/00;G01R31/40 |
主分类号 |
H02M1/08 |
代理机构 |
|
代理人 |
Stephens, Jr. Michael C. |
主权项 |
1. A zero-crossing detection circuit, comprising:
a) a first detection circuit configured to detect a current through a main transistor of a main circuit of a switching power supply, and to generate a voltage sense signal that represents said current through said main transistor, wherein said first detection circuit comprises a first transistor that is coupled to a source of said main transistor; b) a second detection circuit configured to detect if quasi-resonance occurs in said main circuit, said second detection circuit being configured to generate at least one pulse signal when said quasi-resonance is detected; and c) a control circuit configured to receive said at least one pulse signal and said voltage sense signal, to turn said main transistor off when said current through said main transistor reaches a predetermined value, and to turn said main transistor on by turning said first transistor on when said at least one pulse signal is active. |
地址 |
Hangzhou CN |