Device contacting process for high density connections - esp. for contacting LEDs on common silicon@ chip without use of bonding techniques

摘要

Contacting of (opto)electronic devices (A) arranged on a support (T), esp. LEDs arranged on a drive circuit, is carried out by (i) applying an electrically insulating plastics layer (Ks), pref. a 10-180 microns thick polyimide foil, onto the support (T) and the devices (B); (ii) using a laser beam to form contact holes in the plastics layer (Ks) in the region of connection faces (A) of the support (T) and the devices (B); and (iii) producing electrically conductive connections between the connection faces in the form of via contacts (D) in the contact holes and conductor lines (L) on the surface of the plastics layer (Ks). USE/ADVANTAGE - Esp. for contacting LEDs mounted on a common Si chip, e.g. to produce character generators for non-mechanical printers or to produce LED panel displays. The process permits a higher density of connection faces and/or a larger number of connections compared with bonding techniques and the plastics layer also provides compensation of the different thermal expansions of the devices and the support.