| 摘要 |
PURPOSE: To efficiently form a film where needless impurities are not mixed, by adding a predetermined quantity of hydrogen chloride or chloride into hydrogen when forming a film by plasma vapor phase method. CONSTITUTION: When forming a film on a substrate 1 provided with a reactor by plasma vapor growth method, the alkaline metal such as sodium made on the inwall of a reactor or a substrate holder 2 is cleaned with plasma by the gas where from 1% to 5% hydrogen chloride or chloride is added to plasmatic hydrogen. This is the manufacture of installing a substrate 1 after that in the reactor, and forming a film by plasma vapor growth method. Hereby, a film without dispersion in each processing process and excellent in reproducibility and quality can be obtained. |
