| 摘要 |
PURPOSE: To manufacture a small sized piezoelectric vibration angular velocity meter at a low cost. CONSTITUTION: A silicon nitride film 2 is formed on a silicon wafer 1 and etching is applied thereto via a resist 3 having a prescribed pattern to expose the wafer 1. It is further etched by means of a solution of 40% potassium hydroxide and the exposed part of the wafer 1 is removed. After that, a lower electrode 5, a PZT film 6 and an upper electrode 7 are formed by being laminated. In the process of etching of the wafer 1, anisotropy etching utilizing a crystal axis anisotropy of a silicon single crystal is executed, thereby enabling the forming of the products with high accuracy and good reproducibility. |
