| 摘要 |
PROBLEM TO BE SOLVED: To realize a high-practicability light emitting thyristor having a switching characteristic and visible light emission characteristic. SOLUTION: On a GaP compd. n-type semiconductor single crystal substrate 1 an n-type emitter layer NE 2, p-type base layer PB 3, n-type base layer NB 4 and p-type emitter layer PE 5 are formed to form a pnpn structure. The layer 3 is 3 microns thick or less, and its p-type carrier concn. is set to a range from 4×10<16> cm<-3> to 3×10<17> cm<-3> . The boundaries between the layers 2 and 3 and between the layers 3 and 4 have neither spike-like protrusion nor recess but are made flat to obtain a good switching characteristic. N atoms to be emission centers are doped near junctions J1 and J3 and n-type carrier concn. at the layers 2 and 4 near these p-n junctions is reduced to the order of 10<16> cm<-3> , thereby enhancing the brightness of the yellow green. |
