| 摘要 |
An etching mask is made of a metal such as Permalloy (NiFe) and has a T-shaped cross section made up of a vertical bar having width W1 and a lateral bar having width W2. Through ion beam etching with the etching mask, the region in the surface of a workpiece not covered with the mask is selectively removed by the ion beams applied thereto. In the mask the vertical bar has a region obstructed by the lateral bar and a redeposit portion. As a result, the region of the vertical bar near the interface between the workpiece and the vertical bar that substantially determines the pattern width does not change in width. Consequently, a pattern of the workpiece on which etching has been performed has the top width and bottom width substantially equal to width W1 of the vertical bar of the mask. The pattern is rectangular in cross section.
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