Manufacturing method of mim nonlinear device, mim nonlinear device, and liquid crystal display device

摘要

PCT No. PCT/JP96/00903 Sec. 371 Date Nov. 29, 1996 Sec. 102(e) Date Nov. 29, 1996 PCT Filed Apr. 1, 1996 PCT Pub. No. WO96/30953 PCT Pub. Date Oct. 3, 1996In a manufacturing method of a MIM nonlinear device (50) having a Ta electrode layer (16), an anodic oxidation film (18) and a Cr electrode layer (20), tantalum oxidation film (14) is first formed on the transparent substrate (12). The Ta electrode layer (16) is formed on the tantalum oxidation film (14) and the anodic oxidation film (18) is formed on the Ta electrode layer (16). Then, heat treatment is performed to the substrate. The final temperature drop in the heat treatment process is carried out in the atmosphere that contains water vapor. After that, the Cr electrode layer (20) is formed to complete the MIM nonlinear device (50). By conducting the heat treatment in the atmosphere that contains water vapor, the nonlinear characteristics of the MIM device can be improved as well as the improvement of the resistance characteristic in the OFF state.