SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device whose light-emitting part has a light-emitting density higher than 600 PDI and exhibits a higher taking-out efficiency and a higher light output with respect to an injected current and which enables a high yield. SOLUTION: The laminated structure of the light-emitting diode of a light- emitting diode array has at least a current constriction part and a reflective slope 110b. At least a part of the region of the current constriction part through which a current flows is provided so as to spatially overlap the reflective slope 110b. A light reflected by the reflective slope 110b is taken out of an emitting end surface 110a. Further, an upper electrode 270 is formed on the reflective slope 110b with an insulating film therebetween.