| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing this device, in which a high output or a high frequency operation can be attained by making a substrate thin or forming a through-hole at the time of forming a GaN system semiconductor element on a hard and stable single-crystal substrate such as sapphire or SiC, or the operating voltage of the element can be reduced at the time of forming a GaN system light-emitting element on the substrate. SOLUTION: A GaN system semiconductor layer 2 is grown on the surface of a sapphire substrate 1, a GaN system FET 3 is formed, a particle diameter is successively made small by using diamond polishing particle slurry, the substrate is made thin so as to be less than 100 μm by polishing the back face of the substrate, and a polishing distortion layer is removed by etching the back face with phosphoric acid liquid or the like. Next, the etching of the back face of the substrate is carried out with a similar etching liquid so that a through-hole 8 is formed, a GaN system semiconductor layer 2 at the bottom part of this through-hole is removed by etching with an RIE method, and an Au pad 4 electrically connected with the source of the GaN system FET 3 is exposed, and then an Au thick film connected through the through- hole with the Au pad is formed. |
