| 摘要 |
PROBLEM TO BE SOLVED: To improve the crystallinity of a main conduction layer by providing the main conduction layer for inputting/outputting an electric signal to/from a dielectric thin film, an adhesion layer for making a substrate closely adhere to the main conduction layer and a diffusion suppressing layer, which is formed between the main conduction layer and the adhesion layer and suppresses element diffusion from the substrate or the adhesion layer to the main conduction layer. SOLUTION: A first metal thin film 6 as an adhesion layer reinforces adhesion between a third metal thin film 8 which is a main conduction layer and a substrate 1 via a second metal thin film 7 of platinum and the like as a diffusion suppressing layer. The metal element of titanium diffused in the second metal thin film 7 forms the diffusion suppressing layer through subsequent oxidation and nitriding. Then, the forming temperature of the third metal thin film 8 can be freely selected, and the layer can be formed at a high temperature. Consequently, crystallinity improves. Also even if the thickness of an electrode is thin, the deterioration of ability due to impurity is not caused in the third metal thin film 8, it is applicable with respect to all elements applying the dielectric thin film, and improvement in element characteristic results. |
