| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for diffusing impurities allowing more preferable light emitting diodes, by enabling distribution and density of a zinc diffusion layer to still contribute to the improvement in luminance. SOLUTION: In diffusing zinc into a wafer 2 of GaAs compound using ZnAs2 as a diffusion source 3 by a sealed tube method, the wafer 2 is continuously heated for a specified time at a temperature range wherein zinc can be diffused into the wafer 2, and then cooled to a temperature wherein zinc does not diffuse from the surface of the wafer 2, and continuously heat-treated for a specified time at the above temperature, which outwardly diffuses zinc once diffuse inwardly from the surface of the wafer 2 to decrease the carrier density of a p-n junction region. |
