| 摘要 |
PROBLEM TO BE SOLVED: To surely remove non-volatile reaction products re-adhering on the side wall of an etching mask layer after etching a material that is hard to etch such as a noble metal or the like. SOLUTION: An organic substance film 13 and a TiN layer 14 to be a hard mask are stacked in this order on an Ir layer 12 (c). The stacked layers are dry etched using a photoresist film 15 for the mask (e). The photoresist film 15 is removed (f). Dry etching of the Ir layer 12 is carried out using an oxygen- containing gas (h). Since the organic substance film 13 is side-etched by this dry etching, the side-wall re-adhering layer composed of the reaction products is not generated on the side wall of the organic-substance film layer. By subsequently carrying out an ashing process, only the organic-substance film layer is etched off, and the TiN layer which has served for the mask is easily removed. As a result, only the patterned material that has been subjected to the etching remains (j).
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