SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To improve high-temperature and high-withstand voltage operating characteristics as compared with a conventional GaN-family device. SOLUTION: This semiconductor device is equipped with a semiconductor substrate, the buffer layer of a nitride semiconductor that is formed on the semiconductor substrate, and the channel layer of the nitride semiconductor that is formed in an upper layer as compared with the buffer layer. The channel layer is formed by an AlXGa1-XN layer (0<X<1).