发明名称 |
Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy |
摘要 |
A method of reducing contact resistance of metal silicides to a silicon-containing substrate is provided. The method includes first forming a metal germanium layer over a silicon-containing substrate. An optionally oxygen barrier layer may be formed over the metal germanium layer. Next, the structure containing the metal germanium layer is annealed at a temperature effective in converting at least a portion of the metal germanium layer into a substantially non-etchable metal silicide layer, while forming a Si-Ge interlayer between the substrate and the silicide layer. After annealing, the optional oxygen barrier layer and any remaining metal germanium layer is removed from the substrate.
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申请公布号 |
US6331486(B1) |
申请公布日期 |
2001.12.18 |
申请号 |
US20000519897 |
申请日期 |
2000.03.06 |
申请人 |
IBM |
发明人 |
CABRAL JR CYRIL;CARRUTHERS ROY ARTHUR;HARPER JAMES MCKELL EDWIN;LAVOIE CHRISTIAN;ROY RONNEN ANDREW;WANG YUN YU |
分类号 |
H01L21/285;(IPC1-7):H01L2/44 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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