| 摘要 |
PURPOSE: To provide a semiconductor memory in which the number of times of rewriting being more can be guaranteed using a 1T1C cell. CONSTITUTION: This device is provided with a memory cell (20) having one transistor one capacitor constitution connected to bit lines of (n+1) lines simultaneously driven, one pair of sense amplifiers (23L, 23R) connected respectively to the bit lines of (n+1) lines, and a reference voltage generating circuit (36) outputting respectively the maximum voltage, the minimum voltage, or voltage in accordance with this voltage out of bit line voltage at the time of parallel accessing the bit lines of (n+1) lines to each one pair of sense amplifiers as first and second reference voltage.
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