发明名称 |
Laser separated die with tapered sidewalls for improved light extraction |
摘要 |
A method for separating individual optoelectronic devices, such as LEDs, from a wafer includes directing a laser beam having a width toward a major surface of the semiconductor wafer. The laser beam has an image with a first portion of a first energy per unit width and a second portion of a second energy per unit width less than the first energy. The laser beam image cuts into the first major surface of the semiconductor wafer to produce individual devices. |
申请公布号 |
AU3928802(A) |
申请公布日期 |
2002.05.27 |
申请号 |
AU20020039288 |
申请日期 |
2001.11.16 |
申请人 |
EMCORE CORPORATION |
发明人 |
IVAN ELIASHEVICH;MARK GOTTFRIED |
分类号 |
B23K26/073;B23K26/40;H01L21/78;H01L33/00;H01L33/20 |
主分类号 |
B23K26/073 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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