SEMICONDUCTOR THIN FILM, ITS FORMING METHOD, SYSTEM FOR FORMING SINGLE CRYSTAL SEMICONDUCTOR THIN FILM, METHOD FOR FORMING SINGLE CRYSTAL THIN FILM, SEMICONDUCTOR THIN FILM SUBSTRATE, SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor thin film, and its forming method and system, drawing a clear line of demarcation against a conventional polycrystalline thin film and suitable for fabricating a high performance device having stabilized characteristics in a short time. SOLUTION: At the single crystallization of a non-single crystal thin film, conditions of heat treatment, e.g. laser irradiation, are set such that polycrystalline particles are arranged substantially regularly on an insulating substrate 31 and heat treatment is performed while keeping a surface state where polycrystalline particles are arranged substantially regularly thus forming a single crystal thin film 34 having a structure of advanced crystallization.