| 摘要 |
PROBLEM TO BE SOLVED: To improve the response characteristics of a semiconductor photodetector of a single-carrier traveling type. SOLUTION: In the semiconductor photodetector of the single-carrier traveling type, n+type area is formed in the neighborhood of the interface of a p+ type photoabsorption layer and an n-type carrier traveling layer, thereby suppressing the diffusion of p type impurities to the carrier traveling layer from the photoabsorption layer.
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