| 发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which is so improved that the margin of transfer of a hole can be improved. SOLUTION: A first interlayer insulating film 14 is formed on a semiconductor substrate 100 so as to cover a memory cell region and a peripheral circuit region. The surface of the film 14 is polished. A second interlayer insulating film 15 is formed on the film 14. Holes 161 penetrating the films 14, 15 are arranged. Cylinder capacitors are formed in the holes 161.
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| 申请公布号 |
JP2002164518(A) |
申请公布日期 |
2002.06.07 |
| 申请号 |
JP20000361316 |
申请日期 |
2000.11.28 |
| 申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
OOTO KENICHI;TANAKA YOSHINORI |
| 分类号 |
H01L21/02;H01L21/311;H01L21/316;H01L21/318;H01L21/768;H01L21/8242;H01L27/108;(IPC1-7):H01L27/108;H01L21/824 |
主分类号 |
H01L21/02 |
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