发明名称 Method for manufacturing a metal interconnection having enhanced filling capability
摘要 A method for manufacturing a metal interconnection includes the steps of, preparing an active matrix provided with a substrate, an insulating layer and an opening formed through the insulating layer, forming a diffusion barrier layer on surfaces of the opening and the insulating layer, forming a protection layer on the diffusion barrier layer, forming a first metal layer into the opening and upon the protection layer, forming a second metal layer on the first metal layer, and polishing back the first and the second metal layer to a top surface of the insulating layer, thereby forming a metal interconnection.
申请公布号 US6475900(B2) 申请公布日期 2002.11.05
申请号 US20000739293 申请日期 2000.12.19
申请人 HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. 发明人 LEE SUNG-KWON
分类号 H01L21/28;H01L21/283;H01L21/306;H01L21/3205;H01L21/768;H01L23/52;(IPC1-7):C23C14/16 主分类号 H01L21/28
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