发明名称 METHOD FOR DRIVING MEMORY AND SEMICONDUCTOR STORAGE DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a memory which has a low frequency of refreshing, low current consumption during a data retention period, and is excellent in miniaturization. SOLUTION: In a method for driving the memory, when executing refresh operation for recovering data degradation of memory cells, the number of majority carriers injected into a floating body is larger than the number of the majority carriers discharged from the floating body when the potential of the floating body is higher than a critical value, and the number of the majority carriers injected into the floating body is smaller than the number of the majority carriers discharged from the floating body when the potential of the floating body is lower than the critical value. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009004043(A) 申请公布日期 2009.01.08
申请号 JP20070165119 申请日期 2007.06.22
申请人 TOSHIBA CORP 发明人 OSAWA TAKASHI
分类号 G11C11/406;G11C11/404;H01L21/8242;H01L27/108 主分类号 G11C11/406
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