发明名称 MANUFACTURING APPARATUS OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce irregularities in an ashing rate due to deterioration with age inside an ashing chamber. SOLUTION: In order to make the ashing rate constant, the reduction is indirectly monitored on the number of oxygen atoms in the ashing gas inside a process chamber 101, and the ashing gas is fed in volume equivalent to the reduced number of the oxygen atom. As the indirect monitoring means, such performance is executed that the opening of an APC valve 130 is monitored, and the reduced ashing gas is estimated and fed. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009049383(A) 申请公布日期 2009.03.05
申请号 JP20080181613 申请日期 2008.07.11
申请人 PANASONIC CORP 发明人 ONISHI KATSUHIKO
分类号 H01L21/3065 主分类号 H01L21/3065
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