Multi-layer dielectric stack for plasma damage protection

摘要

Embodiments of the disclosure generally provide multi-layer dielectric stack configurations that are resistant to plasma damage. Methods are disclosed for the deposition of thin protective low dielectric constant layers upon bulk low dielectric constant layers to create the layer stack. As a result, the dielectric constant of the multi-layer stack is unchanged during and after plasma processing.

主权项

1. A method of depositing a multi-layer dielectric stack, comprising:
depositing upon a substrate a first layer having a first thickness, wherein the first layer is formed by delivering one or more organosilicon compounds and one or more porogens in the presence of RF power, and the first layer is formed in a processing region of a plasma chamber; depositing a second layer over the first layer, wherein the second layer has a second thickness that is less than the first thickness, and wherein the second layer is formed by delivering one or more organosilicon compounds and one or more porogens in the presence of RF power in the processing region; and exposing the second layer to an ultraviolet radiation, wherein a porous cross-linked multi-layer dielectric stack is produced, and the porogen is removed from the first layer and second layer.