| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a higher withstand voltage.SOLUTION: A semiconductor device comprises a semiconductor substrate SUB having a configuration in which a supporting substrate SS, a buried insulating film BX, and a semiconductor layer SL are stacked in this order. A first groove DTR2 is formed so as to reach the supporting substrate SS from a surface of the semiconductor layer SL, and a second groove DTR1 is formed so as to reach the buried insulating film BX from the surface of the semiconductor layer SL. The semiconductor device further includes an insulating film IIA formed in the first groove DTR2 so as to be along a wall surface of the semiconductor layer SL and formed so as to form a first hollow AG1 in the second groove DTR1, and a conductive layer PL2 formed in the first groove DTR2 so as to be electrically connected to the supporting substrate SS and having a surface exposed from the insulating film IIA. |
