| 发明名称 | Power semiconductor package with gate and field electrode leads | ||
| 摘要 | A power semiconductor package includes a housing, a semiconductor chip embedded in the housing, and at least four terminals partially embedded in the housing and partially exposed to the outside of the housing. The semiconductor chip includes a first doping region in ohmic contact with a first metal layer, a second doping region in ohmic contact with a second metal layer, and a plurality of first trenches that includes gate electrodes and first field electrodes electrically insulated from the gate electrodes. A first terminal of the four terminals is electrically connected to the first metal layer, a second terminal of the four terminals is electrically connected to the second metal layer, a third terminal of the four terminals is electrically connected to the gate electrodes of the first trenches, and a fourth terminal of the four terminals is electrically connected to the first field electrodes of the first trenches. | ||
| 申请公布号 | US9431394(B2) | 申请公布日期 | 2016.08.30 |
| 申请号 | US201314013804 | 申请日期 | 2013.08.29 |
| 申请人 | Infineon Technologies AG | 发明人 | Zundel Markus |
| 分类号 | H01L23/31;H01L23/00;H01L27/088;H01L23/495;H01L29/78;H01L29/739;H01L29/40;H01L29/417 | 主分类号 | H01L23/31 |
| 代理机构 | Murphy, Bilak & Homiller, PLLC | 代理人 | Murphy, Bilak & Homiller, PLLC |
| 主权项 | 1. A power semiconductor package, comprising: a housing; a semiconductor chip at least partially embedded in the housing, the semiconductor chip comprising a first doping region in ohmic contact with a first metal layer, a second doping region in ohmic contact with a second metal layer, and at least a. plurality of first trenches formed in the semiconductor chip, wherein the first trenches comprise gate electrodes and at least first field electrodes electrically insulated from the gate electrodes; and at least four terminals partially embedded in the housing and partially exposed to the outside of the housing, wherein a first terminal of the at least four terminals is electrically connected to the first metal layer,a second terminal of the at least four terminals is electrically connected to the second metal layer,a third terminal of the at least four terminals is electrically connected to the gate electrodes of the first trenches, anda fourth terminal of the at least four terminals is electrically connected to the first field electrodes of the first trenches. | ||
| 地址 | Neubiberg DE | ||