Edge termination for super junction MOSFET devices

摘要

In one embodiment, a Super Junction metal oxide semiconductor field effect transistor (MOSFET) device can include a substrate and a charge compensation region located above the substrate. The charge compensation region can include a plurality of columns of P type dopant within an N type dopant region. In addition, the Super Junction MOSFET can include a termination region located above the charge compensation region and the termination region can include an N− type dopant. Furthermore, the Super Junction MOSFET can include an edge termination structure. The termination region includes a portion of the edge termination structure.

主权项

1. A Super Junction metal oxide semiconductor field effect transistor (MOSFET) device comprising:
a substrate; a charge compensation region located above said substrate and comprising a plurality of columns of P type dopant within an N type dopant region; an N− type dopant layer located above said charge compensation region; a source, a portion of said source is located above said N− type dopant layer; a drain, a portion of said drain is located above said N− type dopant layer; and an edge termination structure located between said source and said drain, a portion of said edge termination structure is located above said N− type dopant layer; said plurality of columns of P type dopant are similar in height beneath said source, said edge termination structure, and said drain.