Magnetic random access memory with nickel/transition metal multilayered seed structure

摘要

The present invention is directed to a magnetic random access memory element that includes a multilayered seed structure formed by interleaving a first type sublayer and a second type sublayer to form one or more repeats of a unit bilayer structure and a first magnetic layer formed on top of the multilayered seed structure. The unit bilayer structure is made of the first and second type sublayers with at least one of the first and second type sublayers including therein one or more ferromagnetic elements. The multilayered seed structure may be amorphous or non-magnetic or both. The unit bilayer structure may be made of CoFeB and Ta sublayers.

主权项

1. A magnetic random access memory element comprising:
a multilayered seed structure formed by interleaving one or more layers of nickel with one or more layers of tantalum; and a first magnetic layer formed on top of said multilayered seed structure, said first magnetic layer having a first fixed magnetization direction substantially perpendicular to layer plane thereof.