发明名称 Optoelectronic semiconductor chip, optoelectronic semiconductor component, and a method for producing an optoelectronic semiconductor component
摘要 An optoelectronic semiconductor chip includes a semiconductor body that emits primary light, and a luminescence conversion element that emits secondary light by wavelength conversion of at least part of the primary light, wherein the luminescence conversion element has a first lamina fixed to a first partial region of an outer surface of the semiconductor body, the outer surface emitting primary light, and leaves free a second partial region of the outer surface, the luminescence conversion element has a second lamina fixed to a surface of the first lamina facing away from the semiconductor body and spaced apart from the semiconductor body, the first lamina is at least partly transmissive to the primary radiation, a section of the second lamina covers at least the second partial region, and at least the section of the second lamina is designed to be absorbent and/or reflective and/or scattering for the primary radiation.
申请公布号 US9444022(B2) 申请公布日期 2016.09.13
申请号 US201214118475 申请日期 2012.05.18
申请人 OSRAM Opto Semiconductors GmbH 发明人 Eisert Dominik;Baade Torsten;Zitzlsperger Michael
分类号 H01L33/50;H01L33/44;H01L33/60;H01L33/52;H01L33/48;H01L33/56;H01L33/62 主分类号 H01L33/50
代理机构 DLA Piper LLP (US) 代理人 DLA Piper LLP (US)
主权项 1. An optoelectronic component comprising a reflector cavity, a light-emitting semiconductor body that emits primary light in the reflector cavity and a luminescence conversion element that emits secondary light by wavelength conversion of at least part of the primary light, wherein the reflector cavity has an opening, a first partial region of the opening is covered with a reflector layer, a second partial region of the opening is not covered with the reflector layer, and the luminescence conversion element in a plan view of the opening completely overlaps the second partial region, wherein, in a plan view of the opening, the second partial region laterally with respect to the semiconductor body is arranged in an edge region of the opening and wherein the luminescence conversion element is an encapsulation compound with which the reflector cavity is filled.
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