Semiconductor light emitting device with a film having a roughened surface

摘要

According to one embodiment, the second insulating film is provided between the first interconnect portion and the second interconnect portion, and at an outer periphery of a side face of the semiconductor layer. The optical layer is provided on the first side, and on the second insulating film at the outer periphery. The optical layer is transmissive with respect to light emitted from the light emitting layer. The film is provided between the second insulating film at the outer periphery and the optical layer. The film has a roughened surface on a side in contact with the optical layer.

主权项

1. A semiconductor light emitting device, comprising:
a semiconductor layer including a first side, a second side opposite to the first side, and a light emitting layer; a first electrode provided on the semiconductor layer on the second side; a second electrode provided on the semiconductor layer on the second side; a first insulating film provided on the second side; a first interconnect portion provided on the first insulating film and connected to the first electrode; a second interconnect portion provided on the first insulating film and connected to the second electrode; a second insulating film provided between the first interconnect portion and the second interconnect portion, and at an outer periphery of a side face of the semiconductor layer; an optical layer provided on the first side, and on the second insulating film at the outer periphery, the optical layer being transmissive with respect to light emitted from the light emitting layer; and a film provided between the second insulating film at the outer periphery and the optical layer, the film having a roughened surface on a side in contact with the optical layer at the outer periphery.