Method of fabricating fin-field effect transistors (finFETs) having different fin widths

摘要

Provided are methods of forming field effect transistors. The method includes preparing a substrate with a first region and a second region, forming fin portions on the first and second regions, each of the fin portions protruding from the substrate and having a first width, forming a first mask pattern to expose the fin portions on the first region and cover the fin portions on the second region, and changing widths of the fin portions provided on the first region.

主权项

1. A semiconductor device, comprising:
a substrate including a first region and a second region; a plurality of fins protruding from a top surface of the substrate, the plurality of fins including a first fin, a second fin and a third fin that are disposed in the first region, and including a fourth fin, a fifth fin and a sixth fin that are disposed in the second region, the second fin being disposed between the first fin and the third fin, the fifth fin being disposed between the fourth fin and the sixth fin; a first isolation disposed between the first fin and the second fin; a second isolation disposed between the second fin and the third fin; a third isolation disposed between the fourth fin and the fifth fin; a fourth isolation disposed between the fifth fin and the sixth fin, wherein a width of an upper portion of the second fin is different from a width of an upper portion of the fourth fin based on different conductivity types of transistors defined thereby.