Pixel with multigate structure for charge storage or charge transfer

摘要

This disclosure provides an integrated circuit (IC) including one or more pixels. A photodiode is arranged in a semiconductor substrate and includes an n-type region near an upper surface of the substrate and a p-type region under the n-type region. A semiconductor fin is arranged over the photodiode and is electrically coupled to the n-type region of the photodiode. The semiconductor fin includes a transfer transistor and a separate charge storage or charge transfer region, wherein the charge storage or charge transfer region is adapted to store or transfer charge generated by the photodiode in response to impingent light.

主权项

1. An integrated circuit (IC) including one or more pixels, comprising:
a photodiode arranged in a semiconductor substrate and including an n-type region near an upper surface of the substrate and a p-type region under the n-type region; and a semiconductor fin arranged over the photodiode and including a charge storage or charge transfer region in direct contact with an upper portion of the n-type region of the photodiode, wherein the charge storage or charge transfer region is adapted to store or transfer charge generated by the photodiode in response to impingent light.