Integrated circuit device

摘要

The invention provides an integrated circuit device. The integrated circuit device includes a substrate. A first capacitor is disposed on the substrate. A first metal pattern is coupled to a first electrode of the first capacitor. A second metal pattern is coupled to a first electrode of the second capacitor. A third metal pattern is disposed over the first and second metal patterns. The third metal pattern covers the first capacitor, the first metal pattern and the second metal pattern. The third metal pattern is electrically grounding. An inductor is disposed over the third metal pattern.

主权项

1. An integrated circuit device, comprising:
a substrate; a first capacitor disposed on the substrate; a first metal pattern coupled to a first electrode of the first capacitor; a second metal pattern coupled to a second electrode of the first capacitor; a third metal pattern disposed over the first and second metal patterns and covering the first capacitor, the first metal pattern, and the second metal pattern, wherein the third metal pattern is coupled to ground; and an inductor disposed over the third metal pattern, wherein the first capacitor comprises: a first oxide layer disposed among the first, second, and third metal patterns, wherein the first metal pattern serves as the first electrode of the first capacitor, the second metal pattern serves as the second electrode of the first capacitor.