| 摘要 |
PROBLEM TO BE SOLVED: To obtain a film-forming composition capable of burning in a short time as a interlaminar insulating film in semiconductor device, etc., and forming a silica-based film excellent in crack resistance after PCT(Pressure Cooker Test). SOLUTION: This composition for film formation comprises (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one compound selected from the group consisting of compounds represented by formula (1): RaSi(OR1)4-a, compounds represented by formula (2): Si(OR2)4 and compounds represented by formula (3): R3b(R4O)3-bSi-(R7)d-Si-(OR5)3-cR6c [wherein R is H, F or a monovalent organic group; R1 to R6 are each a monovalent organic group; R7 is O, phenylene group or (CH2)n; (a) is an integer of 1-2, (b) and (c) are each an integer of 0-2 and (d) is an integer of 0 or 1 and (n) is an integer of 1-6], (B) at least one member selected from the group consisting of compounds of the metals in Groups IA and IIA of the periodic table; and (C) an organic solvent. |
