| 摘要 |
PURPOSE:To realize a manufacturing method which facilitates formation of a semiconductor integrated device in which elements are isolated by high resistance semiconductor and makes the surface of the device smooth by providing at least a process wherein a mixture of a semiconductor building-up atmosphere and a halide gas atmosphere is formed in the upstream side of a substrate and the semiconductor building-up is carried out. CONSTITUTION:In order to build up III-V compound semiconductor in trench parts provided on a semiconductor substrate by an organic metal vapor growth method, at least a process wherein a mixture of a semiconductor building-up atmosphere and a halide gas atmosphere is formed in the upstream side of the substrate and the compound semiconductor is built up is provided. For instance, a DH crystal in which trenches are formed at current blocking parts 207 of a laser and a coupling part 208 with an SiO2 film 206 as an etching mask is placed on a carbon susceptor 116 in an MOCVD apparatus and its temperature is elevated by a radio frequency induction coil 114. Then In(CH3)3 and Fe(C2H5)2 are supplied with H2 from a gas inlet 111, PH3 is supplied with H2 from a gas inlet 112 and HCl is supplied with H2 from a gas inlet 113 to build up Fe doped InP selectively. |
