Semiconductor-metal device comprising a Schottky junction and process for its production

摘要

A semiconductor-metal device according to which an electrode 22 is formed on a semiconductor substrate 20 to form a Schottky junction between the two, and the electrode comprises an oxide film 223 which has a first thickness on its upper surface and a nonoxidised portion which has a second thickness starting at the Schottky junction. A process for producing a semiconductor-metal device according to which a conductive layer formed on a semiconductor substrate is oxidised in a gas containing oxygen and a coverless reheating of the semiconductor substrate supporting the oxidised conductive layer is conducted in an atmosphere containing arsenic. <IMAGE>