| 摘要 |
PURPOSE:To improve film formation speed and uniformity of interfacial film thickness and interfacial dopant concentration, when a doped thin film is formed. CONSTITUTION:In the forming method of a doped thin film wherein, while gas for doping which contains film forming gas and dopant is supplied in a reduced pressure reaction vessel 1, thin films containing dopant are formed on the surfaces of a plurality of objects to be treated which are arranged at previously determined intervals, the supply amount of the above-mentioned film forming gas is set in the range of about 300-5000 SCCM, the reaction temperature of the objects to be treated is set in the range of about 550-600 deg.C, and the film forming operation of the doped thin film is performed. |
