| 摘要 |
PURPOSE:To make an open end voltage higher and improve a photoelectric conversion efficiency so as to obtain an amorphous solar cell having a high capacity by applying to a conductive thin film a semiconductor thin film which has the crystalline property in the extra thin film state. CONSTITUTION:Two processings, i.e., a thin film formation under the process of irradiating ions on a generating surface and ion irradiation only, are repeated alternately to form a thin film of 1 to 100Angstrom in thickness per one cycle, resulting in a photoelectric transducer having a crystalline semiconductor thin film of less than 300Angstrom in total thickness. Therefore, this crystalline semiconductor thin film formation can realize the film thickness of less than 300Angstrom which has not been reached by the conventional techniques, so that an open end voltage and photoelectric conversion efficiency can be improved by applying these semiconductor thin films to the conductive thin films comprising an amorphous solar cell. |
