发明名称 |
Microelectronic circuit structure including conductor bridges encapsulated in inorganic dielectric passivation layer |
摘要 |
A gallium arsenide Monolithic-Microwave-Integrated-Circuit (MMIC) flip chip or other microelectronic circuit structure (10) includes a plated gold bridge (28) which serves as metal interconnect crossover between sites (24,-26) on a substrate (12). A first inorganic dielectric passivation layer (16), preferably of silicon dioxide, is formed under and supports the bridge (28). A second inorganic dielectric passivation layer (30), also preferably of silicon dioxide, is formed over and encapsulates the bridge (28) and the chip surface. A titanium/gold/titanium membrane (22) is formed under the bridge (28) to enable adhesion of the bridge (28) to the first passivation layer (16) and form plating contacts for the bridge (28). A contact bump post (38) is formed in a bump hole or via (32) which extends through the first and second passivation layers (16,30) to a bump contact site (34) on the substrate (12). Another titanium/gold/titanium membrane (40) is formed on the bump post (38) and the wall of the bump via (32) to provide a plating contact for a bump (42) which is plated on the membrane (40) inside the bump via (32) where the bump post (38) is located. |
申请公布号 |
US5406122(A) |
申请公布日期 |
1995.04.11 |
申请号 |
US19930143797 |
申请日期 |
1993.10.27 |
申请人 |
HUGHES AIRCRAFT COMPANY |
发明人 |
WONG, WAH-SANG;GRAY, WILLIAM D.;WEN, CHENG P. |
分类号 |
H01L23/485;H01L23/532;(IPC1-7):H01L23/48;H01L29/46 |
主分类号 |
H01L23/485 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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