| 摘要 |
PURPOSE:To improve surface smoothness by maintaining a substrate temperature to a specific temperature or higher when forming a metal wiring material by forming a second metal layer on a first metal layer. CONSTITUTION:A contact hole a is made in an insulation film 2 formed on a substrate 1. Then, a first metal layer 5 is formed on the insulation film 2 so that a contact hole (a) is filled in but a deposition layer 4 which improves the adhesion property of the first metal layer 5 and at the same time has a barrier function between the insulation film 2 and the first metal layer is preferably formed on the insulation film 2 and the first metal layer 5 is formed on the adhesion layer 4. A second metal layer 7 is formed on the first metal layer 5 preferably via an adhesion layer 6 by a high-temperature sputtering with a substrate temperature of 400 deg.C or higher as a wiring material, thus improving the surface smoothness. |
