| 发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND FABRICATION THEREOF |
| 摘要 |
PURPOSE:To enhance controllability of the threshold voltage for a MOSFET constituting a semiconductor integrated circuit device having SOT structure. CONSTITUTION:The semiconductor integrated circuit device comprises a SOI substrate in which a semiconductor layer 1c is formed on a semiconductor substrate 1a through an insulating layer 1b. In the insulating layer 1b, lower electrodes 3n4, 3p4 are provided on the semiconductor layer 1c below an nM0S 3n and a pMOS 3p such that a predetermined fixed bias voltage can be applied thereto.
|
| 申请公布号 |
JPH07131025(A) |
申请公布日期 |
1995.05.19 |
| 申请号 |
JP19930277034 |
申请日期 |
1993.11.05 |
| 申请人 |
HITACHI LTD |
发明人 |
MASUDA HIROO;SATO HISAKO;NAKAMURA TAKAHIDE;TSUNENO KATSUMI;ICHIKAWA JINKO;IKEDA TAKAHIDE;KASHU NOBUYOSHI;MITANI SHINICHIRO |
| 分类号 |
H01L21/8238;H01L21/336;H01L21/339;H01L21/8242;H01L21/8247;H01L21/84;H01L27/092;H01L27/108;H01L27/115;H01L27/12;H01L29/762;H01L29/78;H01L29/786;H01L29/788;H01L29/792;(IPC1-7):H01L29/786;H01L21/823 |
主分类号 |
H01L21/8238 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
