| 摘要 |
<p>PURPOSE: To provide a field emission cold cathode and associate method of manufacture which excels in the insulating characteristics and allows minimization of the influence of eventual dielectric breakage generated in a part of an element concerned by forming an insulative layer from at least two layers made of different materials or the same material, provided that the manufacturing process differs, and forming one of the layers as having a concave section. CONSTITUTION: As the first insulative layer 2 a hot oxided film is grown on a silicon base board 1, and thereover a silicon nitride film as the second insulative layer 3 is deposited by the CVD method. Thereover molybdenum as a gate layer 4 is laid by vacuum evaporation. Then the layers 4, 3, 2 are subjected to ion etching by a photolithographic process so that an opening having a diameter of approx. 1μm is formed. The layer 2 is subjected to wet etching using hydrofluoric acid so that a step is generated with respect to the layer 3. The resist layer is removed, and an Al sacrifice layer is vacuum evaporated in an oblique direction, followed by molybdenum vacuum evaporation from the front, and thus an emitter electrode 5 is formed. Finally the sacrifice layer is etched with phosphoric acid so that the molybdenum film on the gate is removed as the final process.</p> |
